 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high-frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION MJE15029 Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER IN Collector-base voltage Collector-emitter voltage Emitter-base voltage CHA E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE -120 -120 -5 -8 -16 -2 UNIT V V V A A A W Open collector Collector current (DC) Collector current-Peak Base current Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature 2 50 150 -65~150 ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT ae ae /W /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-2V VCB=-120V; IE=0 VCE=-120V; IB=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-3A ; VCE=-2V IC=-4A ; VCE=-2V 40 40 40 20 MIN -120 MJE15029 SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT TYP. MAX UNIT V -0.5 -1.0 -10 -0.1 -10 |I |I V V A mA A CHA IN Transition frequency E SEM NG OND IC 30 TOR UC MHz IC=0.5A;VCE=-10V;f=10MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJE15029 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.10mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE15029 CHA IN E SEM NG OND IC TOR UC 4 |
Price & Availability of MJE15029
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |